ZnSe passivation layer for the efficiency enhancement of CuInS2 quantum dots sensitized solar cells

The effect of ZnSe passivation layer is investigated in the CuInS2 quantum dot sensitized solar cells, which is used to improve the photovoltaic performance. The CuInS2 quantum dot sensitized TiO2 photo-anodes are prepared by assembly linking technique, and then deposited by the ZnSe passivation layer using the successive ionic layer absorption and reaction technique. The optical absorption edge and photoluminescence peak have slightly red-shifted after the passivation layer coating. Under solar light illumination, the ZnSe passivation layer based CuInS2 quantum dot sensitized solar cells have the higher photovoltaic efficiency of 0.95% and incident photon conversion efficiency response than that of pure CuInS2 based solar cells and ZnS passivation layer based solar cells, as the electron injection rate becomes faster after coating with ZnSe passivation layer.