کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1612447 | 1516309 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Realization of Na-doped p-type non-polar a-plane Zn1âxCdxO films by pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Realization of Na-doped p-type non-polar a-plane Zn1âxCdxO films by pulsed laser deposition Realization of Na-doped p-type non-polar a-plane Zn1âxCdxO films by pulsed laser deposition](/preview/png/1612447.png)
چکیده انگلیسی
Na-doped non-polar Zn1âxCdxO thin films with different Cd content were grown on r-plane sapphire substrates by pulsed laser deposition. The Cd content in the Zn1âxCdxO thin films was adjusted via controlling substrate temperature. Based on the X-ray diffraction analysis, Na-doped Zn1âxCdxO films with Cd content below 5.3 at.% exhibit unique non-polar ã112¯0ã orientation, while the films with Cd content above 5.3 at.% present ã0 0 0 1ã and ã112¯0ã mixed orientations. With an effective incorporation of Na, Na-doped non-polar Zn1âxCdxO films exhibit p-type conductivity, as confirmed by rectification behavior of n-ZnO/p-Zn0.947Cd0.053O:Na homojunction. An optimized result with a resistivity of 67.43 Ω cm, Hall mobility of 0.28 cm2/V s, and hole concentration of 3.31 Ã 1017 cmâ3 is achieved, and electrically stable over several months. The chemical states of Na were analyzed by X-ray photoelectron spectro scopy. Room-temperature photoluminescence measurements exhibit redshift of the near-band-edge emission by alloying Cd.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 584, 25 January 2014, Pages 466-470
Journal: Journal of Alloys and Compounds - Volume 584, 25 January 2014, Pages 466-470
نویسندگان
Y. Li, X.H. Pan, J. Jiang, H.P. He, J.Y. Huang, C.L. Ye, Z.Z. Ye,