Low resistivity Fe-Co-B-Ti-Nb amorphous thin film as a copper barrier

► This study first time uses amorphous Fe-Co-B-Ti-Nb to alloy Cu film as an interconnect materials. ► Barrierless 0.793 ((Fe0.55Co0.45) 90B6Ti2Nb2)0.207/Si alloy film had the lowest resistivity of 2.7 μΩcm. ► TheCu0.699((Fe0.55Co0.45)90B6Ti2Nb2)0.301/Si film is suitable for use in the next generation integrated circuits manufacturing.