کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1612679 | 1516307 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancement of room temperature ferromagnetism in Cu-doped AlN thin film by defect engineering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cu-doped AlN thin films were deposited by reactive magnetron co-sputtering at room temperature. The results showed that all the Cu-doped AlN films exhibited room-temperature ferromagnetism (RTFM). The results also showed that when the Cu-doping content was at 4 at.%, the maximum atomic magnetic moment (AMM) was about â¼0.6 μB/Cu. Raman and X-ray absorption spectroscopy showed that large numbers of N-related defects existed in Cu-doped AlN films, which was ascribed to its intrinsic RTFM. Moreover, to verify the role of defects on the RTFM of Cu-doped AlN films, defects were artificially introduced into Al0.96Cu0.04N films by carbon implantation. After carbon implantation, the AMM was significantly enhanced to â¼2.5 μB/Cu. After examination and discussion of the results, we believed that C-N compounds were formed as carbon implantation, which consumed part of the available nitrogen and then increased the density of N-related defects in Al0.96Cu0.04N films. This is favorable for coupling among bound magnetic polarons (BMP). Therefore RTFM is strongly correlated to engineered defects in Cu-doped AlN films. These results promote a viable route to enhance the RTFM of III-nitrides dilute magnetic semiconductors via defect engineering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 586, 15 February 2014, Pages 469-474
Journal: Journal of Alloys and Compounds - Volume 586, 15 February 2014, Pages 469-474
نویسندگان
J.T. Luo, Y.Z. Li, X.Y. Kang, F. Zeng, F. Pan, P. Fan, Z. Jiang, Y. Wang,