کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1612722 | 1516310 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of GaN films on ordinary soda-lime glass substrates with Ni as intermediate layer. With this method, high c-orientated crystalline GaN films with atomically smooth surface were achieved on amorphous Ni/glass substrate at an extremely low temperature of â¼480 °C. This GaN/Ni/glass structures have great potential for dramatically improve the scalability and cost of solid-state lighting, since the adverse effects with high temperature process for glass substrates can be effectively suppressed by this technique.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 583, 15 January 2014, Pages 39-42
Journal: Journal of Alloys and Compounds - Volume 583, 15 January 2014, Pages 39-42
نویسندگان
M.M. Zhong, F.W. Qin, Y.M. Liu, C. Wang, J.M. Bian, E.P. Wang, H. Wang, D. Zhang,