Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model

• We have developed a two layer photothermal deflection model.
• We have determined the electronic properties of BGaAs/GaAs alloys.
• We have studied the boron effect in the electronic parameters.

Photo-thermal deflection technique PTD is used to study the nonradiative recombination process in BGaAs/GaAs alloy with boron composition of 3% and 8% grown by metal organic chemical vapor deposition (MOCVD). A two layer theoretical model has been developed taking into account both thermal and electronic contribution in the photothermal signal allowing to extract the electronic parameters namely electronic diffusivity, surface and interface recombination. It is found that the increase of boron composition alters the BGaAs epilayers transport properties.