کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1612951 1516308 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Se concentration dependent band gap engineering in ZnO1-xSex thin film for optoelectronic applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Se concentration dependent band gap engineering in ZnO1-xSex thin film for optoelectronic applications
چکیده انگلیسی
ZnO1-xSex films with various selenium concentrations are deposited on the sapphire substrate (0 0 0 1) by pulsed laser deposition technique. Structural properties of the thin films studied by X-ray diffraction (XRD) and chemical bonding studied by X-ray photoelectron spectroscopy (XPS) reveals that Se is substituted in O site during the growth of ZnO1-xSex films. Optical properties are analyzed by UV-Visible spectrometer. From the plot for (αhυ)2 vs photon energy, it is inferred that the band gap energy of ZnO1-xSex gradually reduces to 2.85 eV with increasing Se concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 585, 5 February 2014, Pages 94-97
نویسندگان
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