کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1613026 | 1516308 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of flexible Mg and Ga co-doped ZnO thin films with wide band gap energy and transparent conductive characteristics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Development of flexible Mg and Ga co-doped ZnO thin films with wide band gap energy and transparent conductive characteristics Development of flexible Mg and Ga co-doped ZnO thin films with wide band gap energy and transparent conductive characteristics](/preview/png/1613026.png)
چکیده انگلیسی
The transparent conductive and flexible Mg and Ga co-doped ZnO (MGZO) thin films were prepared on poly-ethylene telepthalate (PET) by the RF magnetron sputtering technique at room temperature. The effects of different thicknesses on the structural, chemical, morphological, optical and electrical properties of MGZO thin films were investigated. X-ray diffraction studies showed that MGZO thin films were grown as a polycrystalline hexagonal wurtzite phase without a secondary phase. The peak intensities for the (0002) plane of MGZO thin films were enhanced with increasing thickness. A typical survey spectrum of MGZO thin films confirmed the presence of Mg, Ga, Zn and O resulting from MGZO films regardless of thickness. The MGZO thin films had a larger grain size with increasing thickness. The MGZO thin films showed the widest optical band gap energy of 3.91 eV (50 nm) and lowest electrical resistivity of 5.76 Ã 10â3 Ω cm (400 nm).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 585, 5 February 2014, Pages 608-613
Journal: Journal of Alloys and Compounds - Volume 585, 5 February 2014, Pages 608-613
نویسندگان
Seung Wook Shin, In Young Kim, G.V. Kishor, Yeong Yung Yoo, Young Baek Kim, Jae Yeong Heo, Gi-Seok Heo, P.S. Patil, Jin Hyeok Kim, Jeong Yong Lee,