کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1613088 | 1516311 | 2014 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Al doping on the structural, optical and photoluminescence properties of ZnS nanoparticles
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of Al doping on the structural, optical and photoluminescence properties of ZnS nanoparticles Effect of Al doping on the structural, optical and photoluminescence properties of ZnS nanoparticles](/preview/png/1613088.png)
چکیده انگلیسی
Un-doped and Al doped ZnS nanoparticles were prepared via an efficient and low cost chemical co-precipitation method using Poly Ethylene Glycol (PEG) as stabilizer. In the present study effect of Al concentration on the morphological, structural, and optical properties is studied using X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), Raman analysis, Fourier transform infrared spectroscopy (FTIR), diffuse reflectance spectroscopy (DRS) and photoluminescence (PL) studies. XRD, TEM, FTIR and Raman analysis indicated the formation of impurity-free nanocrystals with cubic structure. DRS studies revealed that as the Al dopant concentration increases the band gap increases in the range of 3.73-4.01Â eV. The PL spectra of all samples exhibit a broad emission band in the range of 350-650Â nm. The Gaussian fitting emission bands for ZnS are located at 382, 398, 417 and 445Â nm. For Al doped ZnS nanoparticles in addition to the pure ZnS peaks two extra peaks are observed at 472 and 493Â nm. Further, enhanced photoluminescence was observed with increasing Al content up to 8Â at.% and beyond this photoluminescence quenching was noticed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 582, 5 January 2014, Pages 257-264
Journal: Journal of Alloys and Compounds - Volume 582, 5 January 2014, Pages 257-264
نویسندگان
D. Amaranatha Reddy, Chunli Liu, R.P. Vijayalakshmi, B.K. Reddy,