Investigation of aluminum-gallium co-doped zinc oxide targets for sputtering thin film and photovoltaic application

Results showed that Al and Ga co-doped ZnO ceramic targets have higher densities and lower resistivities than Al doped ZnO ceramic targets with the same doping concentration. Similarly, AGZ thin films have lower resistivities than AZO thin films deposited under the same conditions. In addition, Al-Ga co-doping leads to higher carrier concentration and broader optical band gap. The nc-Si solar cell coated with AGZ transparent thin film electrode exhibits higher conversion efficiency.