CaCu3Ti4O12 thin films with non-linear resistivity deposited by RF-sputtering

• CaCu3Ti4O12 thin films were obtained by RF sputtering method.
• X-ray diffraction reveals a cubic structure.
• Resistive switching suggest the possibility to manufacture ReRAM devices.

Calcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (1 0 0) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 ± 0.001 Å free of secondary phases. The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO4], [CuO11], [CuO11Vox] and [TiO5·VO] clusters. The CCTO film capacitor showed a dielectric loss of 0.40 and a dielectric permittivity of 70 at 1 kHz. The J–V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms.

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