Epitaxial transformation of hcp-fcc Ti sublattices during nitriding processes of evaporated-Ti thin films due to nitrogen-implantation

► Atomistic transformation processes of Ti films due to N-implantation have been clarified. ► The N2+ ions with 62 keV are implanted into as-deposited Ti film in the in-situ TEM. ► The hcp-fcc transformation is induced by the shear in the <0 1 · 0> direction on the (<0 0 · 1>) plane. ► The shear is promoted by the forming of covalent bonds and by the weakening of Ti-Ti bonds.