Nanometer scale p-type Schottky barrier metal–oxide-semiconductor field-effect transistor using platinum silicidation through oxide technique combined with two-step annealing process

25-nm-gate-length Schottky barrier metal–oxide-semiconductor field-effect transistors (SB-MOSFETs) with platinum silicide (PtSi) was fabricated using silicidation through oxide technique coupled with two-step annealing process. The manufactured SB-MOSFET showed a large on/off current ratio (>107) with excellent short-channel characteristics such as low values of subthreshold swing (83 mV/dec.) and drain induced barrier lowering (23 mV). A controlled Pt flux caused by the densification of SiOx during low temperature 1st step annealing leads to the homogeneous growth of PtSi films at high temperature 2nd step annealing, which was responsible for the superior device performance of nanometer scale SB-MOSFET.

► Nanoscale SB-MOSFET was fabricated using SiTOx and two-step annealing process.
► Manufactured SB-MOSFET showed excellent short-channel characteristics.
► Densification of SiOx during 1st step annealing led to a controlled Pt.
► Formation of high quality PtSi film at 2nd step annealing.