Enhanced photoelectrochemical properties of 100 MeV Si8+ ion irradiated barium titanate thin films

Effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate (BaTiO3) thin films were investigated by irradiating films with 100 MeV Si8+ ions at different ion fluences in the range of 1 × 1011–2 × 1013 ions cm−2. BaTiO3 thin films were deposited on indium tin oxide coated glass substrate by sol gel spin coating method. Irradiation induced modifications in the films were analyzed using the results from XRD, SEM, cross sectional SEM, AFM and UV–Vis spectrometry. Maximum photocurrent density of 0.7 mA cm−2 at 0.4 V/SCE and applied bias hydrogen conversion efficiency (ABPE) of 0.73% was observed for BaTiO3 film irradiated at 5 × 1011 ions cm−2, which can be attributed to maximum negative value of the flatband potential and donor density and lowest resistivity.

► Effect of 100 MeV Si8+ ion irradiation on photoelectrochemical (PEC) properties of BaTiO3 thin films was studied.
► Films were deposited on Indium doped Tin Oxide (ITO) coated glass by sol–gel spin coating technique.
► Optimal irradiation fluence for best PEC response was 5 × 1011 ion cm−2.
► Maximum photocurrent density was observed to be 0.7 mA cm−2 at 0.4 V/SCE.
► Enhanced photo-conversion efficiency was due to maximum negative flatband potential, donor density and lowest resistivity.