BaZrxTi2−xO5 thin films prepared by sol–gel method

BaZrxTi2−xO5 thin films (x = 0, 0.01, 0.02, 0.03 and 0.04) were prepared by sol–gel method. The effect of the Zr content on microstructure and electrical properties of BaZrxTi2−xO5 thin films was investigated. The single-phase BaZrxTi2−xO5 films were obtained at 700 °C with x = 0–0.02, and 800–900 °C with x = 0–0.04. With increasing the Zr content, the annealing temperature to obtain the single BaTi2O5 phase increased. The dielectric and ferroelectric properties were improved due to the Zr substitution. The BaZrxTi2−xO5 thin film with x = 0.02 had the maximum dielectric constant (εr) of 53 at 1 MHz, and the BaZrxTi2−xO5 thin film with x = 0.01 had the maximum remnant polarization (2Pr) of 1.37 μC cm−2.

► BaZrxTi2−xO5 thin films were prepared on Pt/Ti/SiO2/Si substrate by sol–gel method.
► The dielectric and ferroelectric properties were improved due to the Zr substitution.
► BaZrxTi2−xO5 thin film with x = 0.02 had the maximum εr of 53 at 1 MHz.
► BaZrxTi2−xO5 thin film with x = 0.01 had the maximum 2Pr of 1.37 μC cm−2.