Electrical and photoelectrical properties of CuInS2–ZnIn2S4 solid solutions

We have investigated CuInS2–ZnIn2S4 solid alloys containing 4, 8, and 12 mol% ZnIn2S4. The samples with 16 mol% ZnIn2S4 were two component ones. The materials were prepared by the liquid phase deposition method, and had demonstrated n-type conductivity. Temperature dependencies of their electrical conductivity and thermally stimulated currents were investigated in the temperature region from 27 K to 300 K. Their photoconductivity spectral distributions of were analysed at T ≈ 30 K. In the crystals with 8–12 mol% of ZnIn2S4 the induced photoconductivity phenomenon was observed. It was explained on the basis of the two trapping centre model. In the low temperature region conductivity behaviour could be explained on the basis of the Variable Range Hopping model.

Spectral dependencies of the relative photoconductivity of CuInS2–ZnIn2S4 crystals with 4 mol% (left) and 8 mol% (right) of ZnIn2S4. Arrows indicate scanning directions of the spectra.Figure optionsDownload as PowerPoint slideHighlights
► CuInS2–ZnIn2S4 solid alloys containing 4, 8, and 12 mol% ZnIn2S4 were analysed.
► (Photo-) electrical properties were investigated in the temperature region from 27 K to 300 K.
► In the single crystals with 8–12 mol% of ZnIn2S4 the induced photoconductivity was observed.
► The two trapping centre model was used to explain the results.