Effect of Cu on the microstructure and electrical properties of Cu/ZnO thin films

The effect of copper layer on the microstructural and electrical properties of copper (Cu)/zinc oxide (ZnO) thin film structure on glass substrate, prepared by radio frequency (RF) magnetron sputtering have been investigated. Cu/ZnO thin film structures possess good microstructural and electrical properties which are correlated with Cu thickness. The crystal structure, elemental analysis, surface topography and electrical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) with an energy dispersive X-ray spectroscopy (EDS) setup, atomic force microscopy (AFM) and four point probe analysis, respectively. The result showed that Cu/ZnO films exhibit high crystallinity with a very sharp intense XRD peak corresponding to lattice reflection plane (0 0 2) of a hexagonal wurtzite structure. Cu/ZnO film with higher copper thickness shows uniform grains which are densely packed and have distinct grain boundary. Cu/ZnO film with optimum copper thickness showed the lowest resistivity of 1.53 × 10−3 Ω-cm and sheet resistance of 5.06 × 102 Ω/sq.

► We prepared Cu/ZnO thin films with different Cu layer thickness on glass substrate.
► We studied the effect of copper layer on the microstructural and electrical properties of Cu/ZnO thin film. Studied the effect of Cu on the microstructural and electrical properties of the film.
► Cu/ZnO thin film structures possess good microstructural and electrical properties which are correlated with Cu thickness. Possess good microstructural and electrical properties correlated with Cu thickness.
► Cu/ZnO film with optimum copper thickness showed the lowest resistivity of 1.53 × 10−3 Ω-cm and sheet resistance of 5.06 × 102 Ω/sq. Lowest resistivity of 1.53 × 10−3 Ω-cm and sheet resistance of 5.06 × 102 Ω/sq.