کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1615246 1516347 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermoelectric properties of thin films of Sb doped Mg2Si1−xSnx solid solutions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Thermoelectric properties of thin films of Sb doped Mg2Si1−xSnx solid solutions
چکیده انگلیسی

Polycristalline thin films of Mg2Si1−xSnx (x = 0.4, 0.5, 0.6) solid solutions doped with Sb were deposited on SiO2/Si substrates at room temperature by plasma assisted co-sputtering. Independent bias of individual targets of constituent elements enabled to directly control not only the x stoichiometry but also the Sb doping content. The prepared thin films crystallize as a single phase of Mg2Si1−xSnx solid solutions with controlled Sb-doping content between 0 and 3.5 at.%. The carrier concentration and electrical conductivity of deposited films first show an increase with Sb doping at low concentration but followed by a decrease when Sb doping concentration is further increased. Despite rather good structural properties, power factor remained low (<3 × 10−4 WK−2 m−1), i.e. one order of magnitude lower than that of the bulk material. The results highlight the necessity to improve the crystalline quality of the thin films as well as of a finer tuning of Sb content.


► Deposition and thermoelectric properties of Mg2Si1−xSnx films doped with Sb.
► Films stoichiometry and doping controlled by bias voltage of individual targets.
► Sb doping acts as electrons donors but carriers concentration increases nonlinearly.
► Films exhibit low electrical conductivity due to low carriers mobility.
► Films show power factor one order of magnitude lower than that of bulk materials.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 546, 5 January 2013, Pages 138–144
نویسندگان
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