An intense red-emitting phosphor Ca3Gd7(SiO4)5(PO4)O2:Eu3+ for NUV-LEDs application

The red-emitting phosphors Ca3Gd7(SiO4)5(PO4)O2:Eu3+ were synthesized and their photoluminescence properties under near-ultraviolet (NUV) light excitation were investigated. The results indicate that Ca3Gd7(SiO4)5(PO4)O2:Eu3+ can be effectively excited by 393 nm which matches with the emission wavelength of NUV chips for white light emitting diodes (LED). These phosphors present an intensity red emission with maximum at 614 nm. Among them, the optimal sample has high emission intensity and exhibits small thermal-quenching property, which indicates that it can be potentially applied in NUV InGaN-based LEDs.