Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Resistance random access memory of the Pt/Cu/Nb–SrZrO3/Ag/Pt structure was firstly investigated in this work. A bistable resistive switching characteristic was achieved by current–voltage measurements at room temperature. The Cu modulation layer acting as acceptors generates oxygen vacancies in SZO layer, and modify the resistive switching properties of the memory. The dominant conduction mechanism of the high resistance state (HRS) is the space-charge-limited current theory, while the low resistance state (LRS) follows the Ohmic conduction behavior. The observed resistive switching characteristics could be ascribed to the forming of conducting filaments in the Nb-doped SrZrO3 matrix during HRS/LRS. The Pt/Cu/Nb–SrZrO3/Ag/Pt structure exhibits lower operation voltage, lower compliance current, and long retention behavior, which shows a high potential in the generation nonvolatile memory application.

► A Pt/Cu/Nb:SZO/Ag/Pt structure was investigated in resistive switching for the first time.
► It was found the Cu layer could generate more oxygen vacancies in the SZO layer and improve its switching properties.
► The structure exhibits lower compliance current, lower operation voltage and long retention behavior.
► Such a device exhibits a high potential in the next generation nonvolatile memory application.