Deposition of thin films of Mg2Si1−xSnx solid solution by plasma-assisted co-sputtering

We report here preliminary results on the deposition and structural characterization of thin films of Mg2Si1−xSnx solid solutions (x = 0.4–0.6) with Ag-doping (for p-type material) by plasma co-sputtering, using individual targets of constituent elements. Polycrystalline thin films with nano-size crystallites were deposited on SiO2/Si substrates at room temperature. Chemical composition is controlled by the bias voltage of individual targets, while the microstructure is tailored by the flux and particle energy through the operating conditions namely, gas pressure, microwave power and geometrical configuration. The electrical conductivity strongly depends on layers microstructure.

► Deposition and structural characterization of Ag-doped Mg2Si1−xSnx thin films.
► Polycrystalline films of Mg2Si1−xSnx solid solutions formed at room temperature.
► Films chemical composition well controlled by bias voltage of individual targets.
► Films microstructure controlled by deposition conditions.
► Films electrical conductivity strongly depends on microstructure and Ag-doping.