Raman scattering and electrical properties of Zn1−xMnxO films

► ZnO:Mn films with various Mn doping contents (0-6.72 at.%) were fabricated by RF. ► The doped Mn ions are mainly in divalent states. ► The increment of Mn doping induced a significant degradation in crystal quality and smaller grain size. ► One additional mode located at 526 cm−1 related to Mn2+ impurities was observed. ► The increment of Mn doping caused severe suppressions of electron carriers and mobility in Zn1−xMnxO films.