Analysis of electronic parameters of nanostructure copper doped cadmium oxide/p-silicon heterojunction

► The copper doped cadmium oxide (CdO) heterojunction diodes were fabricated by sol-gel method. ► The electrical properties of Cu doped CdO/p-Si heterojunction diode have been investigated. ► A strong effect of the Cu-doped content on the I-V characteristics of the diodes was found. ► It is evaluated that the electrical performance of the CdO/p-Si diode can be controlled by Cu doped.