Thermal stability of Ni(Ta) silicide films on ultra-thin silicon-on-insulator substrates

► The addition of Ta significantly decreased the resistivity of Ni(Ta)Si thin films. ► Compared to the Ni/Si system, the Ni(Ta)Si films on ultra-thin SOI exhibited remarkably improved thermal stability. ► The low-resistivity window of Ni(Ta)Si silicides was extended to high temperature up to 850 °C. ► This study explained these phenomena in terms of the thermally robust Ni(Ta)Si/SiO2 interface and Ta-accumulated grain boundaries.