Magnetic, electric and crystallographic properties of diluted magnetic InSe(1−x)Fe(Co)x semiconductor

The structural, magnetic and electric properties of Fe or Co doped InSe system has been studied. The X-ray diffraction patterns of the doped samples indicate the presence of InSe0.9Fe0.1 or InSe0.9Co0.1, together with a non-magnetic minor phase of In4Se3. The InSe0.9Fe0.1 system is ferromagnetic with high Curie temperature of 870 K. In contrast, the InSe0.9Co0.1 system is antiferromagnetic with different Neel temperatures. Crystallite sizes of the different phases show anisotropy along different crystallographic directions, they vary from 9 to 40 nm. The largest size is along the [0 0 l] direction normal to the staking layers planes. The random model was applied to explain the origin of ferromagnetic properties of Fe doped sample. The non-magnetic phase In4Se3 played a major role in the high temperature ferromagnetic properties of InSe0.9Fe0.1 and the polarization of magnetic spins. The electrical conductivity increased by an order of magnitude of 2 and 1.5 in the case of Fe and Co doped samples, respectively, suggesting that the incorporation of Fe or Co creates new band configuration and hence a modification of electronic density of states of the samples studied. The anomaly in the electrical properties after doping with Fe or Co may suggest that these doped samples may be used as spintronics materials.

► Preparation of InSe doped with Fe or Co.
► The structures revealed the anisotropy in crystallite sizes and change in microstrain.
► Samples show a ferromagnetic phase with high Curie temperature.
► A anomaly in electrical conductivity producing spintronic materials.