Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1Â 0Â 0)

► Ir/n-Ge (1 0 0) Schottky diodes were characterized using I-V, C-V and SEM techniques under various annealing conditions. ► The variation of the electrical and structural properties can be due to effects phase transformation during annealing. ► Thermal stability of these diodes is maintained up to 500 °C anneal. ► SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C.