کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1616529 | 1516374 | 2012 | 6 صفحه PDF | دانلود رایگان |

We report on the structural and magnetic properties of Al1−xSixN films with 0≤ x ≤0.11 deposited on Si (1 0 0) substrates by radio frequency reactive sputtering. X-ray diffractometry (XRD) and energy-dispersive X-ray spectroscopy (EDS) analysis clearly showed that Si atoms were successfully incorporated into AlN, while the crystal structure of the films was maintained. The magnetization curves indicated all the Si-doped AlN films exhibited room-temperature ferromagnetism. Ferromagnetism signals of Si-doped AlN enhanced with increasing Si content and the maximum saturation magnetization (Ms) and coercive field (Hc) obtained at 300 K were about 3.13 × 10−6 emu and 110 Oe, respectively. The results reveal that Si is a potential nonmagnetic dopant for preparing diluted magnetic semiconductor films. It is speculated that the defects-related effects play an important role to determine the long-range magnetic order in Si-doped AlN.
► In this work, Si-doped AlN films with different Si dopings (0 ≤ x ≤11%) have been deposited on silicon (1 0 0) substrates by radio frequency reactive sputtering.
► Si atoms were successfully incorporated into AlN, while the crystal structure of the films was maintained.
► All the doped samples have room temperature ferromagnetism.
► Si is a potential nonmagnetic dopant for preparing diluted magnetic semiconductor films.
► The defects-related effects play an important role to determine the long-range magnetic order in Si-doped AlN.
Journal: Journal of Alloys and Compounds - Volume 519, 5 April 2012, Pages 41–46