Chemical deposition of CuInSe2 thin films by photoelectrochemical applications

Copper indium diselenide films have been synthesized by chemical bath deposition method. The configuration of fabricated cell is n-CuInSe2|NaOH (1 M) + S (1 M) + Na2S (1 M)|C(graphite). The photoelectrochemical cell characterization of the films is carried out by studying current–voltage characteristics in dark, capacitance–voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that CuInSe2 thin films are n-type conductivity. The junction ideality factor is found to be 3.81. The flat band potential is found to be 0.763 V. The barrier height value is found to be 0.232 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency are found to be 310 mV, 20 μA, 42.12% and 0.82%, respectively. Photoresponse shows lighted ideality factor which is 2.92. Spectral response shows the maximum current observed at 650 nm.

► Highly ordered CuInSe2 films are fabricated by CBD method.
► CuInSe2 is an n-type semiconductor which proved from TEP studies.
► The junction ideality factor is found to be 3.81.
► The various performance parameters are determined for CuInSe2 photoelectrode.
► Spectral response shows the maximum current observed at 650 nm.