Structural and dielectric properties of Bi2Zn2/3Nb4/3O7 thin films prepared by pulsed laser deposition at low temperature for embedded capacitor applications

► In this study, we deposited Bi2Zn2/3Nb4/3O7 thin films at room temperature by pulsed laser deposition. ► Dielectric constant and loss tangent of the films post-annealed at 150 °C are 57 and 0.005 at 10 kHz. ► High resolution TEM results show that nanocrystallites exist in the amorphous film. ► The film exhibits excellent leakage current characteristics with low leakage current density. ► Bi2Zn2/3Nb4/3O7 thin films are potential materials for embedded capacitor applications.