کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1616928 | 1005673 | 2011 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effect of V doping on phase composition and electrical properties of K0.4Na0.6Nb1−xVxO3 thin films Effect of V doping on phase composition and electrical properties of K0.4Na0.6Nb1−xVxO3 thin films](/preview/png/1616928.png)
Lead-free K0.4Na0.6Nb1−xVxO3 thin films were prepared by chemical solution deposition method. The effects of V doping on the phase composition and electrical properties of the films were studied at room temperature. The results indicate that the films are composed of orthorhombic and tetragonal phases, and the phase composition is affected by V content. It is also found that the ferroelectric and dielectric properties are improved by V doping (2Prmax = 35.5 μC/cm, ɛmax = 1189). The enhanced electrical properties are attributed to the more T-phase content and better quality of K0.4Na0.6Nb1−xVxO3 (x = 0.015) film.
► V doping is introduced.
► V doping can modify the quality and the electrical properties of the KNN film.
► The phase composition of the films is affected by V doping.
► KNNV0.015 film with maximal T-phase content gains the best electrical properties.
Journal: Journal of Alloys and Compounds - Volume 509, Issue 31, 4 August 2011, Pages 8028–8031