Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol–gel process

In this work, we report on two kinds of PbZrO3 (PZO) antiferroelectric (AFE) thin films with a thickness of about 700 nm, which were fabricated by using zirconium isopropoxide and zirconium nitrate as starting materials, respectively. The effects of the raw materials on microstructure and electrical properties of the PZO AFE films were studied in detail. X-ray diffraction and scanning electron microcopy results showed that the PZO films obtained from zirconium isopropoxide were highly (1 1 1)-oriented and had a more uniform surface microstructure. As a result, the PZO films from zirconium isopropoxide accordingly displayed better electrical properties, such as lager dielectric constant, increased saturated polarization, and smaller leakage current.

• The effects of starting materials on the microstructure and electrical of PZ AFE thin films were studied.
• PZ films obtained from zirconium isopropoxide were highly (1 1 1)-oriented and had a more uniform surface microstructure.
• PZ films with zirconium isopropoxide as starting material also displayed improved electrical properties.