AC conductivity and dielectric properties of GeSexTl0.3 amorphous thin films

AC conductivity and dielectric properties have been studied for amorphous thin films with different thicknesses of glassy system GeSexTl0.3 with X = 3, 4 that prepared with thermal evaporation technique. The measurements are taken at temperature range (303–403 K) and frequency range (102–105 Hz).AC conductivity σac(ω) is found to be proportional to ωs where s < 1. The temperature dependence of the ac conductivity and the parameter s can be discussed with the aim of the correlated barrier-hopping (CBH) model.The dielectric constant ɛ′and the dielectric loss ɛ″ showed frequency and temperature dependence. The maximum barrier height WM calculated from the dielectric measurements according to Giuntini equation are in good agreement with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott in the case of chalcogenide glasses.

• σac(ω) increases with increasing temperature (T) at different frequencies.
• σac(ω) proportional to ωs, s < 1 is the frequency exponent that decreases linearly with T.
• The dielectric constant ɛ′ increases with T and Se content, and decreases with frequency.
• The dielectric loss ɛ″ increases with T and decreases with frequency.
• Values of the maximum barrier height WM are in good agreement with the theory of hopping.