Optical properties of Si–N doped BaMgAl10O17:Eu2+, Mn2+ phosphors for plasma display panels

The photoluminescence properties of Si–N doped BaMgAl10O17:Eu2+, Mn2+ phosphors were studied. Photoluminescence spectrum, powder X-ray diffraction and decay curves were used. The electronic structure of un-doped BaMgAl10O17 was investigated by using the density functional theory. It reveals that an ideal hexagonal shape and particle size in 3–5 μm are obtained by Si–N doping. Additionally, its photoluminescence and thermal stability are both improved. The energy transfer from Eu2+ to Mn2+ also enhanced by suitable Si–N doping. These are expected to be potentially applicable to industrial production of the phosphor in plasma display panels.

► The electronic structure of un-doped BaMgAl10O17 was investigated by using the density functional theory.
► An ideal hexagonal shape and particle size in 3–5 μm are obtained by suitable Si–N doping.
► The photoluminescence and thermal stability of BAM:Eu,Mn are both improved.
► A more feasible energy transfer from Eu2+ to Mn2+ in BAM:Eu, Mn system is illustrated.