کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1617771 1005693 2011 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Doping and annealing effects on ZnO:Cd thin films by sol–gel method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Doping and annealing effects on ZnO:Cd thin films by sol–gel method
چکیده انگلیسی

In this article, ZnO:Cd films were successfully deposited on glass substrates by a sol–gel technique. The influence of doping concentration and annealing temperature effects was carefully investigated. All films exhibited c-axis preferential orientation and optical transparency with visible transmittance >80%. The minimum room temperature resistivity of 0.0341 Ω cm was obtained with 10 at.% Cd doping under 600 °C annealing temperature. The optical band gap of ZnO:Cd film was reduced as Cd doping concentration increased, while the band gap increased with the increase of annealing temperature.

Research highlights
► Sol–gel derived ZnO:Cd thin film exhibits c-axis preferential orientation even if Cd doping concentration reaches up to 30%. Meanwhile, the room temperature resistivity does not decrease monotonously with the increase of Cd doping concentration.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 509, Issue 14, 7 April 2011, Pages 4816–4823
نویسندگان
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