Thermal stability of electrical properties of ZnO:Al films deposited by room temperature magnetron sputtering

In order to investigate the thermal stability of electrical properties for aluminum doped zinc oxide (ZnO:Al, AZO) films deposited by direct current reactive magnetron sputtering, AZO films deposited from an alloy target (0.8 wt.% Al) on soda-lime glasses were annealed in argon gas at different temperatures. A data capturer was applied to monitor and collect real-time sheet resistance (Rs) of the films throughout the annealing. Results revealed that Rs of the film heated at 100 °C was reduced throughout the annealing, however, conductivity of the films annealed over 100 °C was improved at early stage but then deteriorated all along to the end. Some novel Rs change points which need more penetrations were detected. The experimental results obtained from electron diffraction spectrum, X-ray diffraction pattern, X-ray photoelectron spectrum, and Hall measurement were analyzed to explore the effect of the annealing on the electrical properties of AZO films. It was found that the exotic element, which might influence the film properties, was not observed. It was also suggested that the transformation of the crystalline structure and surface chemical bonding states, which resulted in the decrease of carrier concentration and mobility could be the reason for the conductivity degeneration of the films annealed at higher temperature.

Research highlights
► Real-time sheet resistance (Rs) of ZnO:Al films heated in Ar gas was measured by a dada capturer.
► Results revealed that Rs of the film heated at 100 °C was reduced throughout the annealing.
► Rs of the films annealed over 100 °C was reduced at early stage but then increased all along to the end.
► Some novel Rs change points that need more penetrations were detected by the self designed capturer.