High tunability of pulsed laser deposited Ba0.7Sr0.3TiO3 thin films on perovskite oxide electrode

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heterostructure is studied and a band structure is modeled based on the transport properties of the heterostructure. The dielectric constant of the BST film is found to be 630 at 100 kHz with a loss tangent of 0.04. The capacitance voltage characteristics show high tunability for BST thin films.

► The growth of ferroelectric Ba0.7Sr0.3TiO3 films on oxide electrode La0.5Sr0.5CoO3 is reported.
► This oxide layer has reduced the deposition temperature.
► Proposed a band structure based on electrical studies of PtSi/LSCO/BST/LSCO capacitors.
► The leakage current with oxide electrode is discussed in detail.