کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1617887 | 1005696 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
n-Type polycrystalline (CdZn)Se photoelectrode synthesis and its photoelectrochemical characterizations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cd1−xZnxSe photoelectrode have been synthesized by chemical bath deposition method. (CdZn)Se photoelectrode acts as photoanode. The cell configuration is n-CdZnSe|NaOH (1 M) + S (1 M) + Na2S (1 M)|C(graphite). It is found that fill factor and efficiency are maximum for Cd0.9Zn0.1Se. This is due to low resistance, high flat band potential, maximum open circuit voltage as well as maximum short circuit current. The lighted ideality factor was found to be minimum for Cd0.9Zn0.1Se photoelectrode. A cell utilizing photoelectrode showed a wider spectral response.
Research highlights▶ The various properties of the CdZnSe thin films was discussed from point of applications based on PEC. ▶ The various parameters of PEC cells are determined.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 506, Issue 2, 17 September 2010, Pages 673–677
Journal: Journal of Alloys and Compounds - Volume 506, Issue 2, 17 September 2010, Pages 673–677
نویسندگان
P.A. Chate, P.P. Hankare, D.J. Sathe,