Electronic structure and visible-light-driven photocatalytic performance of Cd2SnO4

Cd2SnO4 conducting oxide was prepared via a solid state reaction method, and its photocatalytic O2 evolution performance was presented. The band gaps were estimated to be 2.3 eV for Cd2SnO4 calcined at 1050 °C, 2.4 eV for Cd2SnO4 calcined at 900 °C and 800 °C. The catalysts prepared at 800 °C possessed the largest surface area and the best catalytic activities. The band structure was calculated by a density function theory method. The conduction band bottom was composed of Cd5s, Sn5s and Sn5p orbits, and the valence band top of Cd4d and O2p. The high photocatalytic activities of Cd2SnO4 were attributed to its specific band structures.