Metalorganic chemical vapor deposition of Ti-O-C-N thin films using TBOT as a promising precursor

► Novel precursor (TBOT) has been used for synthesis of from Ti(O,C,N) thin films via APCVD process. ► TiO2 and TiC compounds deposition were thermodynamically favored as products of metalorganic precursor decomposition in presence of H2 gas at temperature >500 °C. ► TiO2 deposited in the form of spherical-like shape particles, TiC deposited in the form of fiber-like shape structures. ► High hardness value was obtained for Ti-O-C-N films at 750 °C (∼425 HV50) due to the formation of stoichiometric TiN phase.