Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

We have investigated the temperature dependent current–voltage (I–V) characteristics of Ti Schottky contacts to p-type InP. The Ti/p-type InP Schottky diode yielded an ideality factor of 1.08 showing good rectifying behavior with a barrier height of 0.73 eV at 300 K. The capacitance–voltage (C–V) characteristics of the Ti Schottky contact to p-type InP have been measured at room temperature and at different frequencies. The barrier heights from C–V measurements are calculated to be 0.71, 0.72 and 0.77 eV at 10 kHz, 100 kHz and 1 MHz, respectively. The discrepancy of barrier heights obtained from I–V at 300 K and C–V characteristics measured at f = 1 MHz at 300 K is negligible due to homogenous nature of Schottky diode structures. The characteristic energy of the diode at 300 K showed thermionic emission to be the dominating current mechanism. The analysis of the reverse current–voltage characteristics of the Ti Schottky contact to p-type InP reveals that the main process involved in leakage current could be associated with the Frenkel–Poole emission at 300 K, while at 350 K and 400 K, the Schottky emission.