Shape memory effect-induced crack closure in Si thin film deposited on a Ti–50.3Ni (at%) alloy substrate

Cracks developed by tensile loading in the Si thin film deposited on the Ti–50.3Ni (at%) substrate were closed by the shape memory effect of the substrate. The interfacial layer formed after annealing at 873 K between the Si thin film and the substrate was essential for the shape memory effect-induced crack closure. Cracks which formed during lithiation in the Si thin film annealed at 873 K after deposition were closed by delithiation followed by heating up to 373 K.