Fabrication and characterization of ceramic thin films by RF magnetron sputtering using Zn-enriched (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 as target

Dielectric ceramic thin film was fabricated on SiO2 (1 1 0) substrates by radio frequency (RF) magnetron sputtering method using a Zn-enriched (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 target. The microstructure, components, and morphological properties of the thin films were characterized thoroughly. The results reveal that the main phases of the thin films are BaxSr1−xNb2O6, which are of different compositions from that of the ceramic target due to Zn loss. The thin films are polycrystalline and of dense structure with uniform grain sizes and well-defined grain boundaries.