MOCVD growth and characterizations of BxAl1−xAs and BxAl1−x−yInyAs alloys

► The influence of graphite susceptor coating on boron incorporation into AlAs has been investigated for the first time. ► Surface morphology revolution and Raman scattered spectra of bulk BxAl1−xAs alloys with boron composition increased have been studied. ► The behaviors of boron incorporation into AlAs and GaAs have been compared. ► Bulk BxAl1−x−yInyAs quaternary alloys have been grown on GaAs substrates for the first time. ► Lattice-matched BxAl1−x−yInyAs (x = 1.9%) alloy and corresponding 10-period BAlInAs/GaAs MQW structure have been demonstrated for the first time.