کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1618689 1516383 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Mechanical stability of Si thin film deposited on a Ti-50.3Ni(at%) alloy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Mechanical stability of Si thin film deposited on a Ti-50.3Ni(at%) alloy
چکیده انگلیسی
Silicon thin film annealed at 973 K for 7.2 ks after being deposited on a Ti-50.3Ni(at%) substrate was not detached from the substrate after 2.2% tensile deformation, which was ascribed to a diffusion bonding between the Si film and substrate. The B2-B19′ transformation start temperature (Ms) of the Ti-Ni substrate with Si thin film increased by annealing, which was ascribed to a tensile stress developed by the difference in thermal expansion coefficient between the Si film and substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 497, Issues 1–2, 14 May 2010, Pages L13-L16
نویسندگان
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