Physical characterization of post-deposition annealed metal-organic decomposed cerium oxide film spin-coated on 4H-silicon carbide

Cerium oxide (CeO2) precursor, prepared by metal-organic decomposition method, was spin-coated on n-type 4H-SiC substrate. Effect of post-deposition annealing (600, 800, and 1000 °C) in argon ambient on physical properties of the deposited film (∼110 nm) was investigated. Refractive index (nf) of the film was measured by ellipsometer. Lorentz–Lorenz law was applied to estimate the film density (ρf). nf and ρf were increased with increasing annealing temperature. Film with defect-free surface had been revealed under field-emission scanning electron microscope. In order to study topography and surface roughness of the annealed oxides and SiC surfaces, atomic force microscope was used. The film showed an increment in surface roughness when the annealing temperature was increased. X-ray diffraction (XRD) was employed to detect the presence of crystalline phases and orientations in the films. Williamson–Hall plots were constructed from XRD line broadening, in which grain size (D) and microstrains were determined. Opposite relationship between D and microstrains was observed with the increase of annealing temperature. Coefficient of texture was calculated and used to measure preferred orientation of the film. All of the films annealed at different temperatures demonstrated (2 0 0)-preferred orientation.