Thickness effects of Bi0.89Ti0.11FeO3 thin films deposited on PbZr0.2Ti0.79Nb0.01O3 buffer layers

▶ PbZr0.2Ti0.79Nb0.01O3 buffer layer can reduce the leakage current, coercive field and the asymmetry coercivity of the upper Bi0.89Tb0.11FeO3 film. ▶ The remnant polarization Pr and coercive field Ec for all Bi0.89Ti0.11FeO3 films show weak dependent on the film thickness. ▶ The 200-nm-thick Bi0.89Tb0.01FeO3 film exhibits the lowest leakage current, strong fatigue resistance as well as good charge-retaining ability.