The influence of H2/Ar ratio on Ge content of the μc-SiGe:H films deposited by PECVD

An alternative approach of adjusting the Ge content in μc-SiGe:H films is explored by changing the H2/Ar flow rate ratio. The results reveal that the Ge content and film deposition rate both decrease with the increasing flow rate ratio of H2/Ar. Optical constants of the films are obtained by simulating the optical transmission spectrum using a modified envelope method. The dark conductivity and activation energy are investigated by measuring the temperature-dependent conductivity. The dependence of Ge content, deposition rate and optoelectronic properties on flow rate ratio of H2/Ar is discussed.