Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method

This paper focuses on the piezoresponse characteristics at room temperature in niobium modified bismuth ferrite thin films (BFN) deposited on Pt/TiO2/SiO2/Si (1 0 0) substrates by the soft chemical method. The obtained films were grown at a temperature of 500 °C. The Nb dopant is effective in improving electrical properties of BFO films. XPS results show a single-phase Nb-doped BFO thin films with a Fe3+ valence state. It was found that Nb-doped BFO thin films exhibited good electrical properties, such as improved capacitance–voltage and high piezoeletric coefficient, indicating a promising material for use in future memories based on magnetic ferroelectrics.