Study on chemical solution deposition of aluminum-doped zinc oxide films

ZnO:Al thin films were prepared on n-type (1 0 0)-oriented Si and glass slide substrates by chemical solution deposition method. The effects of Al content, the annealing temperature in air, the annealing temperature in reducing atmosphere and the solution concentration on the structural, morphological, electrical and optical characteristics have been investigated systematically. The results show that the processing parameters play an important role in the microstructures as well as the properties. The lowest resistivity value (0.091 Ω cm) was observed by optimization of the processing parameters.