کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1619904 | 1005726 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering](/preview/png/1619904.png)
چکیده انگلیسی
The p-type copper selenide thin films were deposited on glass substrate at room temperature by magnetron sputtering. The effects of sputtering power on crystallinity, surface morphology, optical and electrical properties of the copper selenide thin films were investigated. By adjusting the sputtering power, the thickness of as-deposited films varied between 225 nm and 375 nm. The crystallinity, the optical band-gap as well as the electrical conductivity of the as-deposited films were improved substantially. The copper selenide thin film deposited under optimal sputtering power possesses best crystallinity, widest optical band-gap of 2.40 eV and lowest electrical resistivity of 3.94 × 10−4 Ω cm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 505, Issue 2, 3 September 2010, Pages 623–627
Journal: Journal of Alloys and Compounds - Volume 505, Issue 2, 3 September 2010, Pages 623–627
نویسندگان
Y.Z. Li, X.D. Gao, C. Yang, F.Q. Huang,